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超高性能矽漂移探測器

FAST SDD® Ultra High Performance Silicon Drift Detector 型號:FAST SDD
這是真正的尖端技術!
Amptek 最近在內部引入了矽晶片製造工藝並改進了此工藝。 他們生產出的探測器具有更低的雜訊、更低的洩漏電流、更好的電荷收集能力,並且探測器之間的一致性更好。 這使它成為目前性能最佳且真正尖端的矽漂移探測器。
  • 產品概述

    傳統的 SDD 在密封的 TO-8 封裝內使用了一個接面場效電晶體(JFET)以及一個外部前置放大器,而 FAST SDD 在 TO-8 封裝內使用了一個互補式金屬氧化物半導體(CMOS)前置放大器,並用金屬氧化物半導體場效電晶體(MOSFET)取代了 JFET。 這顯著降低了電容,提供了更低的串聯雜訊,並提高了短峰值時間時的解析度。 FAST SDD® 使用了相同的探測器,但帶有前置放大器,可在較短的峰值時間時提供更低的雜訊。 改善後的(更低)解析度可分離具有相近能量值以及峰可能重疊的螢光 X 射線,從而使用戶能夠更好地識別樣品中的所有元素。 較短的峰值時間也可顯著提高計數率; 更多計數可提供更好的統計數據。

     

    產品特點

    • 25 mm² 有效面積准直至 17 mm²
      • 也有 70 mm² 准直至 50 mm²
    • 5.9 keV 時 122 eV FWHM 解析度
    • 計數率 > 1,000,000 CPS
    • 高峰背比 – 26,000/1
    • 前置放大器輸出上升時間 <35>i>
    • 視窗:Be(0.5 密耳)12.5 μm 或專利 C 系列 (Si3N4)
    • 硬輻射
    • 探測器厚度 500 μm
    • TO-8 封裝
    • 冷卻 ΔT>85 K
    • 多層準直器


    真正的尖端技術

    • 雜訊更低 → 改善後的解析度低至 122 eV FWHM
    • 洩漏電流更低 → 工作溫度更高(延長電池壽命)
    • 電荷收集更好 → 光峰形狀更好(無拖尾)
    • 品質 → 探測器具有一致的性能,更容易校準

    應用

    • 超快速臺式和手持式 XRF 分析儀
    • 作為 EDS 系統的一部分,在 SEM 中掃描/繪製樣品譜圖
    • 在線流程控制
    • X 射線分揀機
    • 太空和天文應用
    • OEM

    該圖顯示了太空站上 NICER X 射線定時儀器的 96 個 Amptek FAST SDD®,其中 C2 視窗在安裝遮光罩之前
    安裝在焦平面上。 鳴謝: NASA/Keith Gendreau

     

     

  • 常規

    探測器類型

    CMOS 前置放大器的矽漂移探測器(SDD

    探測器尺寸

    25 mm2 - 準直至 17 mm2
    也有 270 mm - 準直至 50 mm2

    矽厚度

    500 µm

    准直器

    內部多層準直器(ML

    能量解析度 @ 5.9 keV55Fe

    4 μs 峰值時間時為 122 - 129 eV FWHM(保證)

    峰背比

    20,00015.9 keV 1 keV 的計數比)(典型值)

    探測器視窗選項

    鈹(Be):0.5 密耳(12.5 μm)或 0.3 密耳(8 μm

    專利 C 系列 (Si3N4) 低能量視窗

    電荷靈敏前置放大器

    CMOS

    增益穩定性

    <20 ppm/°C(典型值)

    尺寸

    探測器模組:TO-8 封裝(0.640 英寸高,包括接腳,0.600 英寸直徑)
    XR100 盒:3.00 x 1.75 x 1.13 in7.6 x 4.4 x 2.9 cm),不包括延長管
    X-123 盒:2.7 x 3.9 x 1 in7 x 10 x 2.5 cm)不包括延長管
    OEM 配置各有不同

    重量

    探測器模組:0.14 oz4.1 g
    XR100 盒:4.4 oz125 g
    X-123 盒:6.3 oz180 g
    OEM 配置各有不同

    總功率

    <2 W

    保固

    1

    典型設備壽命

    5 10 年,視使用方式而定

    工作條件

    -35°C +80°C

    儲存和運輸

    長期存儲:10年以上保持環境乾燥
    典型存儲和運輸:-40 °C +85 °C10 90% 濕度,無冷凝

    TUV 認證
    證書編號:CU 72072412 02
    經測試符合:UL 61010-1 2004 R7 .05
    CAN/CSA-C22.2 61010-1
    2004

    輸入

    前置放大器電源

    XR100 配置:±8 V @ 15 mA,峰間雜訊不超過 50 mV
    OEM
    配置(PA210/230 X-123):±5 V

    探測器電源

    +100 +180 V @ 25 μA 非常穩定,變化 <0.1%

    致冷器電源

    電流 = 最大 450 mA,電壓 = 最大 3.5 V,峰間雜訊 <100 mV
    注:XR-100SDD 配有自己的溫度控制器

    輸出

    前置放大器靈敏度

    典型 3.6 mV/keV(可能因不同探測器而異)

    前置放大器極性

    正信號輸出(最大負載為 1 kohm

    前置放大器反饋

    重置

    溫度監測靈敏度

    因配置而異
    當與 PX5DP5 X-123 一起使用時:通過軟體直接讀取凱爾文溫度值。

    前置放大器輸出上升時間

    <35 ns

     

  • Overview

    Unlike our conventional SDDs which use a junction gate field-effect transistor (JFET) inside the hermetically sealed TO-8 package, along with an external preamplifier, the FAST SDD uses a complementary metal-oxide-semiconductor (CMOS) preamplifier inside the TO-8 package, and replaces the JFET with a metal-oxide-semiconductor field-effect transistor (MOSFET).  This significantly reduces capacitance, providing much lower series noise and yielding improved resolution at very short peaking times.  The FAST SDD® uses the same detector but with a preamplifier giving lower noise at short peaking times. Improved (lower) resolution enables isolation/separation of fluorescent X-rays with close energy values where peaks would otherwise overlap, permitting users better identification all of the elements in their sample(s).  Short peaking times also yield significant improvements in count rates; more counts provide better statistics.

    Features

    • Different detector sizes are also available.
      • 25 mm² active area collimated to 17 mm²
      • 70 mm² active area collimated to 50 mm²  
    • Resolution of 122 eV FWHM at 5.9 keV
    • Count rates > 1,000,000 CPS
    • High peak-to-background ratio – 26,000/1
    • Windows: Be (0.5 mil) 12.5 µm, Be (0.3 mil) 8 µm, or Patented C-Series (Si3N4)
    • Radiation hard
    • Detector thicknesses
      • 500 µm
      • 1000 um now available 
    • Preamplifier Output Rise Time
      • <35 ns for 500um thick detector
      • <60 ns for 1000um thick detector
    • TO-8 Package
    • Cooling ΔT>85 K
    • Internal Multilayer Collimator


    The True State-Of-The-Art

    • Lower noise → Better resolution down to 122 eV FWHM
    • Lower leakage current → Higher temperature operation (save battery life)
    • Better charge collection → Better photopeak shape (no tailing)
    • Quality → Detectors have consistent performance allowing for easier calibrations
       

     

    Applications

    • Ultra-fast benchtop and handheld XRF analyzers
    • Scanning/mapping of samples in an SEM as part of an EDS system
    • On-line process control
    • X-Ray Sorting Machines
    • Space and Astronomy
    • OEM

    A view of the NICER X-ray Timing Instrument on the Space Station showing 96 Amptek FAST SDDs® with C2 windows mounted on the focal plane, before light shield assembly. Credits: NASA/Keith Gendreau

  • General
    Detector Type Silicon Drift Detector (SDD) with CMOS preamplifier
    Detector Size 25 mm2 - collimated to 17 mm2
    Also available 70mm2 - collimated to 50 mm2
    Silicon Thickness 500 µm  or 1000um available
    Collimator Internal MultiLayer Collimator (ML)
    Energy Resolution @ 5.9 keV (55Fe) 122 - 129 eV FWHM at 4 µs peaking time (guaranteed)
    Peak to Background 20,000:1 (ratio of counts from 5.9 keV to 1 keV) (typical)
    Detector Window Options Beryllium (Be): 0.5 mil (12.5 µm) or 0.3 mil (8 µm)
    Charge Sensitive Preamplifier CMOS
    Gain Stability <20 ppm/°C (typical)
    Size
    (see Configurations)
    Detector module: TO-8 package (0.640 in. high including pins, 0.600 in. diameter)
    XR100 box: 3.00 x 1.75 x 1.13 in (7.6 x 4.4 x 2.9 cm) excluding extender
    X-123 box: 2.7 x 3.9 x 1 in (7 x 10 x 2.5 cm ) excluding extender
    OEM configurations vary
    Weight
    (see Configurations)
    Detector module: 0.14 oz (4.1 g)
    XR100 box: 4.4 ounces (125 g)
    X-123 box: 6.3 oz (180 g)
    OEM configurations vary
    Total Power <2 Watt
    Warranty Period 1 Year
    Typical Device Lifetime 5 to 10 years, depending on use
    Operation conditions -35°C to +80°C
    Storage and Shipping Long term storage: 10+ years in dry environment
    Typical Storage and Shipping: -40°C to +85°C, 10 to 90% humidity non condensing
    TUV Certification
    Certificate #: CU 72072412 02
    Tested to: UL 61010-1: 2004 R7 .05
    CAN/CSA-C22.2 61010-1: 2004
    Inputs
    Preamp Power XR100 configuration: ±8 V @ 15 mA with no more than 50 mV peak-to-peak noise
    X123 or OEM configuration (PA210/230 or X-123): ±5 V
    Detector Power -100 to -180 V @ 25 µA very stable <0.1% variation
    Cooler Power Current = 450 mA maximum, voltage = 3.5 V maximum with <100 mV peak-to-peak noise
    Note: the XR-100 can include its own internal temperature controller
    Outputs
    Preamplifier Sensitivity 3.6 mV/keV typical (may vary for different detectors)
    Preamplifier Polarity Positive signal output (1 kohm maximum load)
    Preamplifier Feedback Reset
    Temperature Monitor Sensitivity Varies with configuration
    When used with PX5, DP5, or X-123: direct reading in Kelvin through software.
    Preamplifier Output Rise Time <35 ns for 25mm2, <60 ns for 70mm2